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APT30GT60AR
600V 40A
Thunderbolt IGBT
The Thunderbolt IGBTTM is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed.
TO-3
(TO-204AE)
* Low Forward Voltage Drop * Low Tail Current * Avalanche Rated * Hermetic Package
MAXIMUM RATINGS
Symbol V CES VCGR V EC VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
* High Freq. Switching to 150KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated
G E C
All Ratings: TC = 25C unless otherwise specified.
APT30GT60AR UNIT
Collector-Gate Voltage (RGE = 20KW) Emitter-Collector Voltage Gate-Emitter Voltage
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current
1
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation
2
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Y R A IN IM L E R P
600 600 15 20 40 30 80 60 65
@ TC = 25C
Volts
Amps
mJ Watts C
160
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX UNIT
600 -15 3 1.6 4 2.0 5 2.5 2.8 40 1000 100
A nA
050-5971 Rev - 5-2000
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
I CES I GES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT30GT60AR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.8VCES I C = I C2 RG = 10W MIN TYP MAX UNIT
1600 155 90 140 60 12 14 55 190 140 18 30
ns nC pF
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
Y R A IN IM L E R P
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W
ns
300 25
0.5 1.2 1.7 18 30
TJ = +150C
mJ
Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W
ns
260 20
Total Switching Losses Forward Transconductance
TJ = +25C VCE = 20V, I C = I C2
1.3 6
mJ S
THERMAL CHARACTERISTICS
Symbol RQJC RQJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.78 40
1 2 3
050-5971 Rev - 5-2000
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, RGE = 25W, L = 144H, Tj = 25C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.

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